PART |
Description |
Maker |
PS21963-ST |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion.
|
Mitsubishi Electric Semiconductor
|
PS21964-S |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
PS21963-4 PS21963-4A PS21963-4C PS21963-4W |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
PS21964-ST |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
IKQ100N60T |
600V low loss switching series third generation
|
Infineon Technologies A...
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APT6017B2LL APT6017LLL |
POWER MOS 7 600V 35A 0.170 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
APT6010JLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 600V 47A 0.100 Ohm
|
Advanced Power Technology
|
APT6029BFLL APT6029SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 600V 21A 0.290 Ohm
|
Advanced Power Technolo... Advanced Power Technology
|
APT6013JLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 POWER MOS 7 600V 39A 0.130 Ohm
|
Advanced Power Technology, Ltd.
|
BAR65-02L BAR65-07 BAR65 BAR65-02V BAR65-03W |
PIN Diodes - Low Loss, Low Capacitance Switch in ultra small SC79 package PIN Diodes - Low loss, low capacitance RF switching PIN diode Silicon PIN Diode
|
INFINEON[Infineon Technologies AG]
|